All IGBT. IQG1B150N120B4 Datasheet

 

IQG1B150N120B4 IGBT. Datasheet pdf. Equivalent


   Type Designator: IQG1B150N120B4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 164 nS
   Coesⓘ - Output Capacitance, typ: 800 pF
   Qgⓘ - Total Gate Charge, typ: 1560 nC
   Package: MODULE

 IQG1B150N120B4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IQG1B150N120B4 Datasheet (PDF)

 ..1. Size:125K  iqxprz
iqg1b150n120b4.pdf

IQG1B150N120B4 IQG1B150N120B4

IQG1B150N120B4PRELIMINARY DATASHEETIGBT Module in iQpakTM3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 150CoT =80 CCPeak collect

 9.1. Size:139K  iqxprz
iqg1b600n120b4.pdf

IQG1B150N120B4 IQG1B150N120B4

IQG1B600N120B4PRELIMINARY DATASHEETIGBT Module in iQPaK3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb-free finished; RoHS compliantMAXIMUM RATINGSParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 600CoT =80 CCPeak collector currentI 1200 ACpulsoT =80 CC

 9.2. Size:126K  iqxprz
iqg1b228n120b4.pdf

IQG1B150N120B4 IQG1B150N120B4

IQG1B228N120B4PRELIMINARY DATASHEETIGBT Module in iQpakTM3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 228CoT =80 CCPeak collect

 9.3. Size:139K  iqxprz
iqg1b300n120b4.pdf

IQG1B150N120B4 IQG1B150N120B4

IQG1B300N120B4PRELIMINARY DATASHEETIGBT Module in iQpak3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 300CoT =80 CCPeak collect

 9.4. Size:139K  iqxprz
iqg1b456n120b4.pdf

IQG1B150N120B4 IQG1B150N120B4

IQG1B456N120B4PRELIMINARY DATASHEETIGBT Module in iQPaK3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb-free finished; RoHS compliantMAXIMUM RATINGSParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 456CoT =80 CCPeak collector current I 912 ACMDiode forward curren

Datasheet: MMG400D170B6EN , IGW30N65L5 , IKD06N60-RF , IKD10N60RF , IKD15N60RF , IQAB50N60D1 , IQAB75N60A1 , IQAB75N60D1 , TGPF30N40P , IQG1B228N120B4 , IQG1B300N120B4 , IQG1B456N120B4 , IQG1B600N120B4 , IQGB150N120GA4 , IQGB150N120GB4 , IQGB150N120I4 , IQGB228N120GA4 .

 

 
Back to Top