Справочник IGBT. IQG1B150N120B4

 

IQG1B150N120B4 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IQG1B150N120B4
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 150
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 1.9
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 164
   Емкость коллектора типовая (Cc), pf: 800
   Тип корпуса: MODULE

 Аналог (замена) для IQG1B150N120B4

 

 

IQG1B150N120B4 Datasheet (PDF)

 ..1. Size:125K  iqxprz
 iqg1b150n120b4.pdf

IQG1B150N120B4 IQG1B150N120B4

IQG1B150N120B4PRELIMINARY DATASHEETIGBT Module in iQpakTM3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 150CoT =80 CCPeak collect

 9.1. Size:139K  iqxprz
 iqg1b600n120b4.pdf

IQG1B150N120B4 IQG1B150N120B4

IQG1B600N120B4PRELIMINARY DATASHEETIGBT Module in iQPaK3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb-free finished; RoHS compliantMAXIMUM RATINGSParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 600CoT =80 CCPeak collector currentI 1200 ACpulsoT =80 CC

 9.2. Size:126K  iqxprz
 iqg1b228n120b4.pdf

IQG1B150N120B4 IQG1B150N120B4

IQG1B228N120B4PRELIMINARY DATASHEETIGBT Module in iQpakTM3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 228CoT =80 CCPeak collect

 9.3. Size:139K  iqxprz
 iqg1b300n120b4.pdf

IQG1B150N120B4 IQG1B150N120B4

IQG1B300N120B4PRELIMINARY DATASHEETIGBT Module in iQpak3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb free finished; RoHS compliantMAXIMUM RATINGS, at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 300CoT =80 CCPeak collect

 9.4. Size:139K  iqxprz
 iqg1b456n120b4.pdf

IQG1B150N120B4 IQG1B150N120B4

IQG1B456N120B4PRELIMINARY DATASHEETIGBT Module in iQPaK3 PackageSingle SwitchFEATURES Ultra low loss IGBT Highly rugged SPT design Pb-free finished; RoHS compliantMAXIMUM RATINGSParameter Symbol Value UnitsCollector-emitter voltage V 1200 VCESDC collector current, T =150oCjmaxI 456CoT =80 CCPeak collector current I 912 ACMDiode forward curren

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