IQGB400N60I4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQGB400N60I4
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 400 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 124 nS
Paquete / Cubierta: MODULE
- Selección de transistores por parámetros
IQGB400N60I4 Datasheet (PDF)
iqgb400n60i4.pdf

IQGB400N60I4PRELIMINARY DATASHEETIGBT in Trench & Field Stop technology with soft,fast recovery anti-parallel diode, Half-BridgeConfiguration in iQPak2 Package Very high switching speed Very low VCE(sat) Very tight parameter distribution High ruggedness, temperature stability Very soft, fast recovery anti-paralleldiode Low turn-off losses Pb-fre
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IXSH30N60A | KGT15N120NDS | NGTB15N135IHRWG | IKB30N65EH5 | APTGF500U60D4 | XNF6N60T | MPBW20N65EF
History: IXSH30N60A | KGT15N120NDS | NGTB15N135IHRWG | IKB30N65EH5 | APTGF500U60D4 | XNF6N60T | MPBW20N65EF



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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