IQGB400N60I4 Datasheet and Replacement
Type Designator: IQGB400N60I4
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 124 nS
Package: MODULE
- IGBT Cross-Reference
IQGB400N60I4 Datasheet (PDF)
iqgb400n60i4.pdf
IQGB400N60I4PRELIMINARY DATASHEETIGBT in Trench & Field Stop technology with soft,fast recovery anti-parallel diode, Half-BridgeConfiguration in iQPak2 Package Very high switching speed Very low VCE(sat) Very tight parameter distribution High ruggedness, temperature stability Very soft, fast recovery anti-paralleldiode Low turn-off losses Pb-fre
Datasheet: IQGB150N120GB4 , IQGB150N120I4 , IQGB228N120GA4 , IQGB228N120GB4 , IQGB228N120I4 , IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , YGW60N65F1A2 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 , IQS2B57N120K4 , IQS2B75N120K4 .
History: IXXH100N60B3
Keywords - IQGB400N60I4 transistor datasheet
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History: IXXH100N60B3
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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