All IGBT. IQGB400N60I4 Datasheet

 

IQGB400N60I4 IGBT. Datasheet pdf. Equivalent


   Type Designator: IQGB400N60I4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 124 nS
   Qgⓘ - Total Gate Charge, typ: 4000 nC
   Package: MODULE

 IQGB400N60I4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IQGB400N60I4 Datasheet (PDF)

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 iqgb400n60i4.pdf

IQGB400N60I4 IQGB400N60I4

IQGB400N60I4PRELIMINARY DATASHEETIGBT in Trench & Field Stop technology with soft,fast recovery anti-parallel diode, Half-BridgeConfiguration in iQPak2 Package Very high switching speed Very low VCE(sat) Very tight parameter distribution High ruggedness, temperature stability Very soft, fast recovery anti-paralleldiode Low turn-off losses Pb-fre

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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