IQGB400N60I4 PDF and Equivalents Search

 

IQGB400N60I4 Specs and Replacement

Type Designator: IQGB400N60I4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 400 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 124 nS

Package: MODULE

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IQGB400N60I4 datasheet

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IQGB400N60I4

IQGB400N60I4 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, Half-Bridge Configuration in iQPak 2 Package Very high switching speed Very low V CE(sat) Very tight parameter distribution High ruggedness, temperature stability Very soft, fast recovery anti-parallel diode Low turn-off losses Pb-fre... See More ⇒

Specs: IQGB150N120GB4 , IQGB150N120I4 , IQGB228N120GA4 , IQGB228N120GB4 , IQGB228N120I4 , IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , FGW75N60HD , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 , IQS2B57N120K4 , IQS2B75N120K4 .

History: IRG4BC30S-S

Keywords - IQGB400N60I4 transistor spec

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