IQIB75N60A3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IQIB75N60A3  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 36 nS

Coesⓘ - Capacitancia de salida, typ: 288 pF

Encapsulados: SOT227

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IQIB75N60A3 datasheet

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IQIB75N60A3

IQIB75N60A3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed 1 Very low VCE(sat Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability - Parallel switching capability 2, 4 Pb-free lead finish

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IQIB75N60A3

IQIB75N60D3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in Isolated SOT227 Package 1 High switching speed Low V CE(sat) Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability 2, 4 - parallel switch

Otros transistores... IQGB228N120I4, IQGB300N120GA4, IQGB300N120I4, IQGB300N60I4, IQGB400N60I4, IQIB100N60A3, IQIB100N60D3, IQIB150N60B3, IRGP4062D, IQIB75N60D3, IQS1B100N60L4, IQS2B57N120K4, IQS2B75N120K4, IXYN100N120B3H1, IXYN100N120C3, IXYN100N120C3H1, IXYN100N65A3