IQIB75N60A3 IGBT. Datasheet pdf. Equivalent
Type Designator: IQIB75N60A3
Type: IGBT
Type of IGBT Channel: N
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 75 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 36 nS
Coesⓘ - Output Capacitance, typ: 288 pF
Qgⓘ - Total Gate Charge, typ: 470 nC
Package: SOT227
IQIB75N60A3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IQIB75N60A3 Datasheet (PDF)
iqib75n60a3.pdf
IQIB75N60A3PRELIMINARY DATASHEETIGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed1 Very low VCE(sat Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution3 High ruggedness, temperature stability- Parallel switching capability2, 4 Pb-free lead finish
iqib75n60d3.pdf
IQIB75N60D3PRELIMINARY DATASHEETIGBT in Trench & Field Stop technology with soft, fast recovery anti-paralleldiode, in Isolated SOT227 Package1 High switching speed Low VCE(sat) Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability2, 4- parallel switch
Datasheet: IQGB228N120I4 , IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , FGW75N60HD , IQIB75N60D3 , IQS1B100N60L4 , IQS2B57N120K4 , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 .
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