IQIB75N60A3 PDF and Equivalents Search

 

IQIB75N60A3 Specs and Replacement

Type Designator: IQIB75N60A3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 75 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 36 nS

Coesⓘ - Output Capacitance, typ: 288 pF

Package: SOT227

 IQIB75N60A3 Substitution

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IQIB75N60A3 datasheet

 ..1. Size:230K  iqxprz
 iqib75n60a3.pdf pdf_icon

IQIB75N60A3

IQIB75N60A3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed 1 Very low VCE(sat Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability - Parallel switching capability 2, 4 Pb-free lead finish... See More ⇒

 5.1. Size:170K  iqxprz
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IQIB75N60A3

IQIB75N60D3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in Isolated SOT227 Package 1 High switching speed Low V CE(sat) Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability 2, 4 - parallel switch... See More ⇒

Specs: IQGB228N120I4 , IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IRGP4062D , IQIB75N60D3 , IQS1B100N60L4 , IQS2B57N120K4 , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 .

Keywords - IQIB75N60A3 transistor spec

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