IQIB75N60D3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQIB75N60D3
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
trⓘ - Tiempo de subida, typ: 36 nS
Coesⓘ - Capacitancia de salida, typ: 288 pF
Encapsulados: SOT227
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IQIB75N60D3 datasheet
iqib75n60d3.pdf
IQIB75N60D3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop technology with soft, fast recovery anti-parallel diode, in Isolated SOT227 Package 1 High switching speed Low V CE(sat) Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability 2, 4 - parallel switch
iqib75n60a3.pdf
IQIB75N60A3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed 1 Very low VCE(sat Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability - Parallel switching capability 2, 4 Pb-free lead finish
Otros transistores... IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , GT30F132 , IQS1B100N60L4 , IQS2B57N120K4 , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 .
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