IQIB75N60D3 Todos los transistores

 

IQIB75N60D3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IQIB75N60D3
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 36 nS
   Coesⓘ - Capacitancia de salida, typ: 288 pF
   Paquete / Cubierta: SOT227
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IQIB75N60D3 Datasheet (PDF)

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 iqib75n60d3.pdf pdf_icon

IQIB75N60D3

IQIB75N60D3PRELIMINARY DATASHEETIGBT in Trench & Field Stop technology with soft, fast recovery anti-paralleldiode, in Isolated SOT227 Package1 High switching speed Low VCE(sat) Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability2, 4- parallel switch

 5.1. Size:230K  iqxprz
 iqib75n60a3.pdf pdf_icon

IQIB75N60D3

IQIB75N60A3PRELIMINARY DATASHEETIGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed1 Very low VCE(sat Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution3 High ruggedness, temperature stability- Parallel switching capability2, 4 Pb-free lead finish

Otros transistores... IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IHW15N120R3 , IQS1B100N60L4 , IQS2B57N120K4 , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 .

History: NGTB30N120IHS | IXGT30N60C3D1 | STGB19NC60HDT4 | DL2G50SH6N | SKM300GAR123D | STGW80V60DF | MMG200DR120B

 

 
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