All IGBT. IQIB75N60D3 Datasheet

 

IQIB75N60D3 Datasheet and Replacement


   Type Designator: IQIB75N60D3
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 288 pF
   Package: SOT227
 

 IQIB75N60D3 substitution

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IQIB75N60D3 Datasheet (PDF)

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IQIB75N60D3

IQIB75N60D3PRELIMINARY DATASHEETIGBT in Trench & Field Stop technology with soft, fast recovery anti-paralleldiode, in Isolated SOT227 Package1 High switching speed Low VCE(sat) Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability2, 4- parallel switch

 5.1. Size:230K  iqxprz
 iqib75n60a3.pdf pdf_icon

IQIB75N60D3

IQIB75N60A3PRELIMINARY DATASHEETIGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed1 Very low VCE(sat Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution3 High ruggedness, temperature stability- Parallel switching capability2, 4 Pb-free lead finish

Datasheet: IQGB300N120GA4 , IQGB300N120I4 , IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IRGP4063 , IQS1B100N60L4 , IQS2B57N120K4 , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 .

History: DIM250PHM33-TS | T2250AB25E | JNG75T65HXU1 | IXSH16N60U1 | VS-GB75LP120N | NGTB30N120IHS | IXYH100N65C3

Keywords - IQIB75N60D3 transistor datasheet

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