All IGBT. IQIB75N60D3 Datasheet

 

IQIB75N60D3 Datasheet and Replacement


   Type Designator: IQIB75N60D3
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 288 pF
   Package: SOT227
      - IGBT Cross-Reference

 

IQIB75N60D3 Datasheet (PDF)

 ..1. Size:170K  iqxprz
 iqib75n60d3.pdf pdf_icon

IQIB75N60D3

IQIB75N60D3PRELIMINARY DATASHEETIGBT in Trench & Field Stop technology with soft, fast recovery anti-paralleldiode, in Isolated SOT227 Package1 High switching speed Low VCE(sat) Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability2, 4- parallel switch

 5.1. Size:230K  iqxprz
 iqib75n60a3.pdf pdf_icon

IQIB75N60D3

IQIB75N60A3PRELIMINARY DATASHEETIGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed1 Very low VCE(sat Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution3 High ruggedness, temperature stability- Parallel switching capability2, 4 Pb-free lead finish

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IKW50N65EH5 | IXGT40N60C2D1 | 1MB08D-120 | IXGH64N60A3 | NGTB30N120IHS | SG12N06DP | DM2G75SH6A

Keywords - IQIB75N60D3 transistor datasheet

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 IQIB75N60D3 equivalent finder
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