IQS2B57N120K4 Todos los transistores

 

IQS2B57N120K4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IQS2B57N120K4
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 57 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.87 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: MODULE
 

 Búsqueda de reemplazo de IQS2B57N120K4 IGBT

   - Selección ⓘ de transistores por parámetros

 

IQS2B57N120K4 Datasheet (PDF)

 ..1. Size:145K  iqxprz
 iqs2b57n120k4.pdf pdf_icon

IQS2B57N120K4

IQS2B57N120K4PRELIMINARY DATASHEET1200V, 57A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), T = 25oC unless otherwise specifiedjParameter Symbol Value UnitsCollec

 9.1. Size:163K  iqxprz
 iqs2b75n120k4.pdf pdf_icon

IQS2B57N120K4

IQS2B75N120K4PRELIMINARY DATASHEET1200V, 75A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCo

Otros transistores... IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 , KGF75N65KDF , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 , IXYN100N65C3H1 , IXYN120N120C3 .

History: NSGM150GB120B | SPT60N65F1A1

 

 
Back to Top

 


 
.