IQS2B57N120K4 Todos los transistores

 

IQS2B57N120K4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IQS2B57N120K4
   Tipo de transistor: IGBT
   Polaridad de transistor: N
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 57 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.87 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 60 nS
   Coesⓘ - Capacitancia de salida, typ: 300 pF
   Paquete / Cubierta: MODULE
 

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IQS2B57N120K4 Datasheet (PDF)

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 iqs2b57n120k4.pdf pdf_icon

IQS2B57N120K4

IQS2B57N120K4PRELIMINARY DATASHEET1200V, 57A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), T = 25oC unless otherwise specifiedjParameter Symbol Value UnitsCollec

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 iqs2b75n120k4.pdf pdf_icon

IQS2B57N120K4

IQS2B75N120K4PRELIMINARY DATASHEET1200V, 75A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCo

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: CM10MD-24H | SKM75GB124D | SRE30N065FSSDF | 1MBC05D-060 | IXGF20N300 | BSM35GP120 | AUIRGP66524D0

 

 
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