IQS2B57N120K4 Specs and Replacement
Type Designator: IQS2B57N120K4
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 57 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.87 V @25℃
tr ⓘ - Rise Time, typ: 60 nS
Coesⓘ - Output Capacitance, typ: 300 pF
Package: MODULE IQS2B57N120K4 Substitution - IGBT ⓘ Cross-Reference Search
IQS2B57N120K4 datasheet
iqs2b57n120k4.pdf
IQS2B57N120K4 PRELIMINARY DATASHEET 1200V, 57A 6-pack Bridge IGBT in SPT+ Technology with Fast and Soft Recovery Anti-parallel Diode in iQpowermod 1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliant MAXIMUM RATINGS (per IGBT), T = 25oC unless otherwise specified j Parameter Symbol Value Units Collec... See More ⇒
iqs2b75n120k4.pdf
IQS2B75N120K4 PRELIMINARY DATASHEET 1200V, 75A 6-pack Bridge IGBT in SPT+ Technology with Fast and Soft Recovery Anti-parallel Diode in iQpowermod 1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliant MAXIMUM RATINGS (per IGBT), at T = 25oC, unless otherwise specified j Parameter Symbol Value Units Co... See More ⇒
Specs: IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 , CRG40T65AK5HD , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 , IXYN100N65C3H1 , IXYN120N120C3 .
Keywords - IQS2B57N120K4 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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