All IGBT. IQS2B57N120K4 Datasheet

 

IQS2B57N120K4 Datasheet and Replacement


   Type Designator: IQS2B57N120K4
   Type: IGBT
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 57 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.87 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Package: MODULE
      - IGBT Cross-Reference

 

IQS2B57N120K4 Datasheet (PDF)

 ..1. Size:145K  iqxprz
 iqs2b57n120k4.pdf pdf_icon

IQS2B57N120K4

IQS2B57N120K4PRELIMINARY DATASHEET1200V, 57A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), T = 25oC unless otherwise specifiedjParameter Symbol Value UnitsCollec

 9.1. Size:163K  iqxprz
 iqs2b75n120k4.pdf pdf_icon

IQS2B57N120K4

IQS2B75N120K4PRELIMINARY DATASHEET1200V, 75A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCo

Datasheet: IQGB300N60I4 , IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 , IRGP4063 , IQS2B75N120K4 , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 , IXYN100N65C3H1 , IXYN120N120C3 .

History: SPT60N65F1A1 | CM200E3U-24F | SIGC03T60E | 7MBR25SA120-01 | APTGF180DH60 | SKM145GAR123D | CRG05T60A44S-G

Keywords - IQS2B57N120K4 transistor datasheet

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 IQS2B57N120K4 equivalent finder
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 IQS2B57N120K4 replacement

 

 
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