All IGBT. IQS2B57N120K4 Datasheet

 

IQS2B57N120K4 Datasheet and Replacement


   Type Designator: IQS2B57N120K4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 57 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.87 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qg ⓘ - Total Gate Charge, typ: 611 nC
   Package: MODULE
 

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IQS2B57N120K4 Datasheet (PDF)

 ..1. Size:145K  iqxprz
 iqs2b57n120k4.pdf pdf_icon

IQS2B57N120K4

IQS2B57N120K4PRELIMINARY DATASHEET1200V, 57A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), T = 25oC unless otherwise specifiedjParameter Symbol Value UnitsCollec

 9.1. Size:163K  iqxprz
 iqs2b75n120k4.pdf pdf_icon

IQS2B57N120K4

IQS2B75N120K4PRELIMINARY DATASHEET1200V, 75A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCo

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SPT60N65F1A1 | BSM200GB60DLC | IXGM25N100A | IXSA15N120B | NGTB15N120L | CM150TL-12NF | BSM300GAR120DLC

Keywords - IQS2B57N120K4 transistor datasheet

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