IQS2B75N120K4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IQS2B75N120K4
Tipo de transistor: IGBT
Polaridad de transistor: N
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 75 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 75 nS
Coesⓘ - Capacitancia de salida, typ: 400 pF
Paquete / Cubierta: MODULE
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IQS2B75N120K4 Datasheet (PDF)
iqs2b75n120k4.pdf
IQS2B75N120K4PRELIMINARY DATASHEET1200V, 75A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCo
iqs2b57n120k4.pdf
IQS2B57N120K4PRELIMINARY DATASHEET1200V, 57A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), T = 25oC unless otherwise specifiedjParameter Symbol Value UnitsCollec
Otros transistores... IQGB400N60I4 , IQIB100N60A3 , IQIB100N60D3 , IQIB150N60B3 , IQIB75N60A3 , IQIB75N60D3 , IQS1B100N60L4 , IQS2B57N120K4 , BT15T120ANF , IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 , IXYN100N65C3H1 , IXYN120N120C3 , IXYN120N65B3D1 .
History: NGTB25N120L
History: NGTB25N120L
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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