All IGBT. IQS2B75N120K4 Datasheet

 

IQS2B75N120K4 Datasheet and Replacement


   Type Designator: IQS2B75N120K4
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 75 nS
   Coesⓘ - Output Capacitance, typ: 400 pF
   Package: MODULE
      - IGBT Cross-Reference

 

IQS2B75N120K4 Datasheet (PDF)

 ..1. Size:163K  iqxprz
 iqs2b75n120k4.pdf pdf_icon

IQS2B75N120K4

IQS2B75N120K4PRELIMINARY DATASHEET1200V, 75A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), at T = 25oC, unless otherwise specifiedjParameter Symbol Value UnitsCo

 9.1. Size:145K  iqxprz
 iqs2b57n120k4.pdf pdf_icon

IQS2B75N120K4

IQS2B57N120K4PRELIMINARY DATASHEET1200V, 57A 6-pack Bridge IGBT in SPT+ Technologywith Fast and Soft Recovery Anti-parallel Diode iniQpowermod1 Package Ultra low loss IGBT Smooth switching for good EMC Highly rugged SPT+ design Pb-free finished; RoHS compliantMAXIMUM RATINGS (per IGBT), T = 25oC unless otherwise specifiedjParameter Symbol Value UnitsCollec

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: NCE30TD60BP | FD200R12PT4_B6

Keywords - IQS2B75N120K4 transistor datasheet

 IQS2B75N120K4 cross reference
 IQS2B75N120K4 equivalent finder
 IQS2B75N120K4 lookup
 IQS2B75N120K4 substitution
 IQS2B75N120K4 replacement

 

 
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