IXYN120N65C3D1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXYN120N65C3D1
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 830 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 190 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 29 nS
Coesⓘ - Capacitancia de salida, typ: 585 pF
Qgⓘ - Carga total de la puerta, typ: 265 nC
Paquete / Cubierta: SOT227
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IXYN120N65C3D1 Datasheet (PDF)
ixyn120n65c3d1.pdf
Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN120N65C3D1IC110 = 100AGenX3TM w/ Diode VCE(sat) 2.8V tfi(typ) = 46nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ =
ixyn120n65b3d1.pdf
Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN120N65B3D1IC110 = 120AGenX3TM w/ Diode VCE(sat) 1.90V tfi(typ) = 107nsExtreme Light Punch throughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ
ixyn120n120c3.pdf
Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYN120N120C3GenX3TM IC110 = 120A VCE(sat) 3.20V tfi(typ) = 96nsHigh-Speed IGBTsfor 20-50 kHz SwitchingESOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE
ixyn100n65a3.pdf
Preliminary Technical InformationVCES = 650V650V XPTTM IGBT IXYN100N65A3IC110 = 100AGenX3TM VCE(sat) 1.80V tfi(typ) = 122nsUltra Low-Vsat PT IGBTfor up to 5kHz SwitchingESOT-227B, miniBLOCE153432Symbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VG
ixyn100n65c3h1.pdf
Preliminary Technical InformationVCES = 650VXPTTM 650V GenX3TM IXYN100N65C3H1IC110 = 90Aw/ Sonic DiodeVCE(sat) 2.3Vtfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, R
ixyn100n120c3h1.pdf
1200V XPTTM IGBT VCES = 1200VIXYN100N120C3H1GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES C
ixyn100n65b3d1.pdf
Advance Technical InformationVCES = 650VXPTTM 650V IXYN100N65B3D1IC110 = 100AGenX3TM w/ DiodeVCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M
ixyn150n60b3.pdf
Preliminary Technical InformationVCES = 600V600V XPTTM IGBT IXYN150N60B3IC110 = 130AGenX3TM VCE(sat) 2.20V tfi(typ) = 114nsExtreme Light Punch throughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 600 VGVCGR TJ = 25
ixyn100n120c3.pdf
1200V XPTTM IGBT VCES = 1200VIXYN100N120C3GenX3TM IC110 = 84A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTEfor 20-50 kHz SwitchingSOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 175C 1200 VE VCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous
ixyn100n120b3h1.pdf
Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VIXYN100N120B3H1GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES
Otros transistores... IXYN100N120B3H1 , IXYN100N120C3 , IXYN100N120C3H1 , IXYN100N65A3 , IXYN100N65B3D1 , IXYN100N65C3H1 , IXYN120N120C3 , IXYN120N65B3D1 , MBQ60T65PES , IXYN150N60B3 , IXYN75N65C3D1 , IXYN80N90C3H1 , IXYN82N120C3 , IXBF10N300C , IXBF14N300 , IXBF15N300C , IXBF20N360 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2