IXYN120N65C3D1 Datasheet and Replacement, IGBT Equivalent Finder, Cross Reference. AllTransistors.com

..1. Size:227K ixys
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Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN120N65C3D1IC110 = 100AGenX3TM w/ Diode VCE(sat) 2.8V tfi(typ) = 46nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ =

4.1. Size:226K ixys
ixyn120n65b3d1.pdf pdf_icon

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN120N65B3D1IC110 = 120AGenX3TM w/ Diode VCE(sat) 1.90V tfi(typ) = 107nsExtreme Light Punch throughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ

6.1. Size:212K ixys
ixyn120n120c3.pdf pdf_icon

Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYN120N120C3GenX3TM IC110 = 120A VCE(sat) 3.20V tfi(typ) = 96nsHigh-Speed IGBTsfor 20-50 kHz SwitchingESOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE

9.1. Size:215K ixys
ixyn100n65a3.pdf pdf_icon

Preliminary Technical InformationVCES = 650V650V XPTTM IGBT IXYN100N65A3IC110 = 100AGenX3TM VCE(sat) 1.80V tfi(typ) = 122nsUltra Low-Vsat PT IGBTfor up to 5kHz SwitchingESOT-227B, miniBLOCE153432Symbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VG

9.2. Size:233K ixys
ixyn100n65c3h1.pdf pdf_icon

Preliminary Technical InformationVCES = 650VXPTTM 650V GenX3TM IXYN100N65C3H1IC110 = 90Aw/ Sonic DiodeVCE(sat) 2.3Vtfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, R

9.3. Size:226K ixys
ixyn100n120c3h1.pdf pdf_icon

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3H1GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES C

9.4. Size:231K ixys
ixyn100n65b3d1.pdf pdf_icon

Advance Technical InformationVCES = 650VXPTTM 650V IXYN100N65B3D1IC110 = 100AGenX3TM w/ DiodeVCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M

9.5. Size:216K ixys
ixyn150n60b3.pdf pdf_icon

Preliminary Technical InformationVCES = 600V600V XPTTM IGBT IXYN150N60B3IC110 = 130AGenX3TM VCE(sat) 2.20V tfi(typ) = 114nsExtreme Light Punch throughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 600 VGVCGR TJ = 25

9.6. Size:241K ixys
ixyn100n120c3.pdf pdf_icon

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3GenX3TM IC110 = 84A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTEfor 20-50 kHz SwitchingSOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 175C 1200 VE VCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous

9.7. Size:184K ixys
ixyn100n120b3h1.pdf pdf_icon

Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VIXYN100N120B3H1GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES

IXYN120N65C3D1 Datasheet (PDF)

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