Справочник IGBT. IXYN120N65C3D1

 

IXYN120N65C3D1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXYN120N65C3D1
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 830 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 190 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.8 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 29 nS
   Coesⓘ - Выходная емкость, типовая: 585 pF
   Qgⓘ - Общий заряд затвора, typ: 265 nC
   Тип корпуса: SOT227

 Аналог (замена) для IXYN120N65C3D1

 

 

IXYN120N65C3D1 Datasheet (PDF)

 ..1. Size:227K  ixys
 ixyn120n65c3d1.pdf

IXYN120N65C3D1 IXYN120N65C3D1

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN120N65C3D1IC110 = 100AGenX3TM w/ Diode VCE(sat) 2.8V tfi(typ) = 46nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ =

 4.1. Size:226K  ixys
 ixyn120n65b3d1.pdf

IXYN120N65C3D1 IXYN120N65C3D1

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYN120N65B3D1IC110 = 120AGenX3TM w/ Diode VCE(sat) 1.90V tfi(typ) = 107nsExtreme Light Punch throughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ

 6.1. Size:212K  ixys
 ixyn120n120c3.pdf

IXYN120N65C3D1 IXYN120N65C3D1

Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYN120N120C3GenX3TM IC110 = 120A VCE(sat) 3.20V tfi(typ) = 96nsHigh-Speed IGBTsfor 20-50 kHz SwitchingESOT-227B, miniBLOC E153432E Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 175C 1200 VVCGR TJ = 25C to 175C, RGE

 9.1. Size:215K  ixys
 ixyn100n65a3.pdf

IXYN120N65C3D1 IXYN120N65C3D1

Preliminary Technical InformationVCES = 650V650V XPTTM IGBT IXYN100N65A3IC110 = 100AGenX3TM VCE(sat) 1.80V tfi(typ) = 122nsUltra Low-Vsat PT IGBTfor up to 5kHz SwitchingESOT-227B, miniBLOCE153432Symbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 650 VG

 9.2. Size:233K  ixys
 ixyn100n65c3h1.pdf

IXYN120N65C3D1 IXYN120N65C3D1

Preliminary Technical InformationVCES = 650VXPTTM 650V GenX3TM IXYN100N65C3H1IC110 = 90Aw/ Sonic DiodeVCE(sat) 2.3Vtfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, R

 9.3. Size:226K  ixys
 ixyn100n120c3h1.pdf

IXYN120N65C3D1 IXYN120N65C3D1

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3H1GenX3TM w/ Diode IC110 = 60A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES C

 9.4. Size:231K  ixys
 ixyn100n65b3d1.pdf

IXYN120N65C3D1 IXYN120N65C3D1

Advance Technical InformationVCES = 650VXPTTM 650V IXYN100N65B3D1IC110 = 100AGenX3TM w/ DiodeVCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 650 VGVCGR TJ = 25C to 175C, RGE = 1M

 9.5. Size:216K  ixys
 ixyn150n60b3.pdf

IXYN120N65C3D1 IXYN120N65C3D1

Preliminary Technical InformationVCES = 600V600V XPTTM IGBT IXYN150N60B3IC110 = 130AGenX3TM VCE(sat) 2.20V tfi(typ) = 114nsExtreme Light Punch throughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsEVCES TJ = 25C to 175C 600 VGVCGR TJ = 25

 9.6. Size:241K  ixys
 ixyn100n120c3.pdf

IXYN120N65C3D1 IXYN120N65C3D1

1200V XPTTM IGBT VCES = 1200VIXYN100N120C3GenX3TM IC110 = 84A VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTEfor 20-50 kHz SwitchingSOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 175C 1200 VE VCGR TJ = 25C to 175C, RGE = 1M 1200 VGVGES Continuous

 9.7. Size:184K  ixys
 ixyn100n120b3h1.pdf

IXYN120N65C3D1 IXYN120N65C3D1

Preliminary Technical Information1200V XPTTM IGBT VCES = 1200VIXYN100N120B3H1GenX3TM w/ Diode IC110 = 76A VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingESOT-227B, miniBLOCSymbol Test Conditions Maximum Ratings E153432VCES TJ = 25C to 150C 1200 VE VCGR TJ = 25C to 150C, RGE = 1M 1200 VGVGES

Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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