IXBH20N360HV Todos los transistores

 

IXBH20N360HV - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXBH20N360HV
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 430 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 3600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 70 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.4 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 14 nS
   Coesⓘ - Capacitancia de salida, typ: 110 pF
   Paquete / Cubierta: TO247HV
     - Selección de transistores por parámetros

 

IXBH20N360HV Datasheet (PDF)

 ..1. Size:288K  ixys
 ixbh20n360hv.pdf pdf_icon

IXBH20N360HV

Advance Technical InformationHigh Voltage, High GainVCES = 3600VIXBT20N360HVBIMOSFETTM MonolithicIXBH20N360HVIC110 = 20ABipolar MOS TransistorVCE(sat) 3.4VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3600 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VTO-247HV (IXBH)VGEM

 6.1. Size:174K  ixys
 ixbh20n300.pdf pdf_icon

IXBH20N360HV

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH20N300BIMOSFETTM MonolithicIXBT20N300IC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V

 7.1. Size:60K  ixys
 ixbh20n160.pdf pdf_icon

IXBH20N360HV

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140

 7.2. Size:62K  ixys
 ixbh20n140-160.pdf pdf_icon

IXBH20N360HV

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140

MOSTRAR MÁS

Otros transistores... IXBH10N300HV , IXBH14N300HV , IXBA10N300HV , IXBA12N300HV , IXBA14N300HV , IXBA16N170AHV , IXBH20N140 , IXBH20N160 , IRGP4063D , IXBH22N300HV , IXBH40N140 , IXBH42N250 , IXBH42N300HV , IXBJ40N140 , IXBJ40N160 , IXBL20N300C , IXBL60N360 .

History: NCE50TD120VT | BSM100GB60DLC | STGE50NC60WD | 2MBI200TA-060 | IXGT10N170

 

 
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