All IGBT. IXBH20N360HV Datasheet

 

IXBH20N360HV Datasheet and Replacement


   Type Designator: IXBH20N360HV
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 430 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 3600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 70 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.4 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 110 pF
   Package: TO247HV
      - IGBT Cross-Reference

 

IXBH20N360HV Datasheet (PDF)

 ..1. Size:288K  ixys
 ixbh20n360hv.pdf pdf_icon

IXBH20N360HV

Advance Technical InformationHigh Voltage, High GainVCES = 3600VIXBT20N360HVBIMOSFETTM MonolithicIXBH20N360HVIC110 = 20ABipolar MOS TransistorVCE(sat) 3.4VTO-268HV (IXBT)Symbol Test Conditions Maximum RatingsGVCES TJ = 25C to 150C 3600 V E C (Tab)VCGR TJ = 25C to 150C, RGE = 1M 3600 VVGES Continuous 20 VTO-247HV (IXBH)VGEM

 6.1. Size:174K  ixys
 ixbh20n300.pdf pdf_icon

IXBH20N360HV

Preliminary Technical InformationHigh Voltage, High GainVCES = 3000VIXBH20N300BIMOSFETTM MonolithicIXBT20N300IC110 = 20ABipolar MOS TransistorVCE(sat) 3.2VTO-247 (IXBH)Symbol Test Conditions Maximum RatingsVCES TC = 25C to 150C 3000 VGC (TAB)VCGR TJ = 25C to 150C, RGE = 1M 3000 VCEVGES Continuous 20 VVGEM Transient 30 V

 7.1. Size:60K  ixys
 ixbh20n160.pdf pdf_icon

IXBH20N360HV

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140

 7.2. Size:62K  ixys
 ixbh20n140-160.pdf pdf_icon

IXBH20N360HV

High Voltage BIMOSFETTM IXBH 20N140 VCES = 1400/1600 VMonolithic Bipolar IXBH 20N160 IC25 = 20 AMOS Transistor VCE(sat) = 4.7 V typ.N-Channel, Enhancement Mode tfi = 40 nsCTO-247 ADGGCC (TAB)EEG = Gate, C = Collector,E = Emitter, TAB = CollectorSymbol Conditions Maximum Ratings Features20N140 20N160 International standard packageVCES TJ = 25C to 150C 140

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History: SHD739601 | DM2G75SH6A | IXGH64N60A3 | IXGT40N60C2D1 | IXGR72N60B3H1 | NCE50TD120VT | 1MB08D-120

Keywords - IXBH20N360HV transistor datasheet

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