IXGC16N60C2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXGC16N60C2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 63 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 55 pF
Paquete / Cubierta: ISOPLUS220
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IXGC16N60C2 Datasheet (PDF)
ixgc16n60c2.pdf
IXGC 16N60C2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60C2D1C2-Class High SpeedIC25 = 20 AIGBT in ISOPLUS220TM CaseVCE(sat) = 3.0 VElectrically Isolated Back Surfacetfi(typ) = 35 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V
ixgc16n60c2d1.pdf
IXGC 16N60C2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60C2D1C2-Class High SpeedIC25 = 20 AIGBT in ISOPLUS220TM CaseVCE(sat) = 3.0 VElectrically Isolated Back Surfacetfi(typ) = 35 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V
ixgc16n60b2d1.pdf
IXGC 16N60B2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60B2D1B2-Class High SpeedIC25 = 28 AIGBT in ISOPLUS220TM CaseVCE(sat) = 2.3 VElectrically Isolated Back Surfacetfi(typ) = 80 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V
ixgc16n60b2.pdf
IXGC 16N60B2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60B2D1B2-Class High SpeedIC25 = 28 AIGBT in ISOPLUS220TM CaseVCE(sat) = 2.3 VElectrically Isolated Back Surfacetfi(typ) = 80 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2