All IGBT. IXGC16N60C2 Datasheet

 

IXGC16N60C2 Datasheet and Replacement


   Type Designator: IXGC16N60C2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 63 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 55 pF
   Qg ⓘ - Total Gate Charge, typ: 32 nC
   Package: ISOPLUS220
 

 IXGC16N60C2 substitution

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IXGC16N60C2 Datasheet (PDF)

 ..1. Size:533K  ixys
 ixgc16n60c2.pdf pdf_icon

IXGC16N60C2

IXGC 16N60C2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60C2D1C2-Class High SpeedIC25 = 20 AIGBT in ISOPLUS220TM CaseVCE(sat) = 3.0 VElectrically Isolated Back Surfacetfi(typ) = 35 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

 0.1. Size:533K  ixys
 ixgc16n60c2d1.pdf pdf_icon

IXGC16N60C2

IXGC 16N60C2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60C2D1C2-Class High SpeedIC25 = 20 AIGBT in ISOPLUS220TM CaseVCE(sat) = 3.0 VElectrically Isolated Back Surfacetfi(typ) = 35 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

 5.1. Size:82K  ixys
 ixgc16n60b2d1.pdf pdf_icon

IXGC16N60C2

IXGC 16N60B2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60B2D1B2-Class High SpeedIC25 = 28 AIGBT in ISOPLUS220TM CaseVCE(sat) = 2.3 VElectrically Isolated Back Surfacetfi(typ) = 80 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

 5.2. Size:82K  ixys
 ixgc16n60b2.pdf pdf_icon

IXGC16N60C2

IXGC 16N60B2HiPerFASTTM IGBTVCES = 600 VIXGC 16N60B2D1B2-Class High SpeedIC25 = 28 AIGBT in ISOPLUS220TM CaseVCE(sat) = 2.3 VElectrically Isolated Back Surfacetfi(typ) = 80 nsPreliminary Data SheetD1Symbol Test Conditions Maximum Ratings ISOPLUS 220TM (IXGC) E153432VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 V

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Datasheet: IXBX50N360HV , IXCH36N250 , IXCK36N250 , IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IKW50N60H3 , IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB , IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 .

History: 2MBI300U4N-170-50

Keywords - IXGC16N60C2 transistor datasheet

 IXGC16N60C2 cross reference
 IXGC16N60C2 equivalent finder
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