IXGQ240N30PB IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXGQ240N30PB datasheet

..1. Size:150K ixys
ixgq240n30pb.pdf pdf_icon

PolarTM High Speed VCES = 300V IXGQ240N30PB IGBT ICP = 500A VCE(sat) 1.6V For PDP Applications TO-3P Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 300 V G VGES Continuous 20 V C VGEM Transient 30 V E Tab IC25 TC = 25 C (Chip Capability) 240 A ICP TJ 150 C, tp

8.1. Size:152K ixys
ixgq24n30pb.pdf pdf_icon

9.1. Size:508K ixys
ixgq20n120b.pdf pdf_icon

High Voltage IGBT with Diode VCES = 1200 V IXGQ 20N120B IC25 = 40 A IXGQ 20N120BD1 VCE(sat) = 3.4 V tfi(typ) = 160 ns BD1 TO-3P (IXGQ) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 1200 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V G IC25 TC = 25 C40 A C (TAB) E IC110 TC = 110 C20 A ICM TC = 25 C, 1 ms 100

Otros transistores... IXGA20N250 , IXGA20N250HV , IXGA24N60C4 , IXGC16N60B2 , IXGC16N60B2D1 , IXGC16N60C2 , IXGC16N60C2D1 , IXGQ170N30PB , GT30F131 , IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 .