IXGQ240N30PB Datasheet and Replacement
Type Designator: IXGQ240N30PB
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 300 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 240 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 435 pF
Package: TO3P
- IGBT Cross-Reference
IXGQ240N30PB Datasheet (PDF)
ixgq240n30pb.pdf

PolarTM High Speed VCES = 300VIXGQ240N30PBIGBT ICP = 500A VCE(sat) 1.6V For PDP ApplicationsTO-3PSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VGVGES Continuous 20 VCVGEM Transient 30 VETabIC25 TC = 25C (Chip Capability) 240 AICP TJ 150C, tp
ixgq24n30pb.pdf

PolarTM High Speed VCES = 300VIXGQ240N30PBIGBT ICP = 500A VCE(sat) 1.6V For PDP ApplicationsTO-3PSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 300 VGVGES Continuous 20 VCVGEM Transient 30 VETabIC25 TC = 25C (Chip Capability) 240 AICP TJ 150C, tp
ixgq20n120b.pdf

High Voltage IGBT with DiodeVCES = 1200 VIXGQ 20N120BIC25 = 40 AIXGQ 20N120BD1VCE(sat) = 3.4 Vtfi(typ) = 160 nsBD1TO-3P (IXGQ)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1200 VVCGR TJ = 25C to 150C; RGE = 1 M 1200 VVGES Continuous 20 VVGEM Transient 30 VGIC25 TC = 25C40 AC(TAB)EIC110 TC = 110C20 AICM TC = 25C, 1 ms 100
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: VS-GB50LP120N | 7MBP100VDA060-50 | FB20R06W1E3_B11 | STGFW40H65FB | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH
Keywords - IXGQ240N30PB transistor datasheet
IXGQ240N30PB cross reference
IXGQ240N30PB equivalent finder
IXGQ240N30PB lookup
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History: VS-GB50LP120N | 7MBP100VDA060-50 | FB20R06W1E3_B11 | STGFW40H65FB | STGBL6NC60DI | MMIX4B22N300 | MITB10WB1200TMH



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