IXXN200N60B3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXXN200N60B3 datasheet

..1. Size:178K ixys
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Advance Technical Information VCES = 600V XPTTM 600V IGBT IXXN200N60B3 IC110 = 160A GenX3TM VCE(sat) 1.7V tfi(typ) = 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 175 C 600 V G VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VGES Continuous 20 V

0.1. Size:188K ixys
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Advance Technical Information VCES = 600V XPTTM 600V IGBT IXXN200N60B3H1 IC110 = 98A GenX3TM w/Diode VCE(sat) 1.7V tfi(typ) = 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous

4.1. Size:201K ixys
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Preliminary Technical Information VCES = 600V XPTTM 600V IGBT IXXN200N60C3H1 IC110 = 98A GenX3TM w/ Sonic VCE(sat) 2.1V Diode tfi(typ) = 80ns Extreme Light Punch Through E IGBT for 20-60kHz Switching SOT-227B E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continu

Otros transistores... IXGC16N60C2D1 , IXGQ170N30PB , IXGQ240N30PB , IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , TGAN20N135FD , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 .