All IGBT. IXXN200N60B3 Datasheet

 

IXXN200N60B3 Datasheet and Replacement


   Type Designator: IXXN200N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 940 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 280 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 100 nS
   Coesⓘ - Output Capacitance, typ: 570 pF
   Qg ⓘ - Total Gate Charge, typ: 315 nC
   Package: SOT227
 

 IXXN200N60B3 substitution

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IXXN200N60B3 Datasheet (PDF)

 ..1. Size:178K  ixys
 ixxn200n60b3.pdf pdf_icon

IXXN200N60B3

Advance Technical InformationVCES = 600VXPTTM 600V IGBT IXXN200N60B3IC110 = 160AGenX3TM VCE(sat) 1.7V tfi(typ) = 110nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingESOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 175C 600 VGVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Continuous 20 V

 0.1. Size:188K  ixys
 ixxn200n60b3h1.pdf pdf_icon

IXXN200N60B3

Advance Technical InformationVCES = 600VXPTTM 600V IGBT IXXN200N60B3H1IC110 = 98AGenX3TM w/Diode VCE(sat) 1.7V tfi(typ) = 110nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingSOT-227B, miniBLOC E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous

 4.1. Size:201K  ixys
 ixxn200n60c3h1.pdf pdf_icon

IXXN200N60B3

Preliminary Technical InformationVCES = 600VXPTTM 600V IGBT IXXN200N60C3H1IC110 = 98AGenX3TM w/ Sonic VCE(sat) 2.1V Diodetfi(typ) = 80nsExtreme Light Punch ThroughEIGBT for 20-60kHz SwitchingSOT-227B E153432Symbol Test Conditions Maximum RatingsE VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continu

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXXP50N60B3 | IXYH82N120C3

Keywords - IXXN200N60B3 transistor datasheet

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