IXXH110N65C4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXXH110N65C4
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 880 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 234 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.35 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 46 nS
Coesⓘ - Capacitancia de salida, typ: 240 pF
Paquete / Cubierta: TO247
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IXXH110N65C4 Datasheet (PDF)
ixxh110n65c4.pdf
Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXXH110N65C4GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30nsIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VVGEM Transient 30 VGC
ixxh100n60b3.pdf
Preliminary Technical InformationXPTTM 600V VCES = 600VIXXH100N60B3GenX3TM IC110 = 100A VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGC TabVGES Continuous 20 VEVGEM Transien
ixxh100n60c3.pdf
Advance Technical InformationVCES = 600VXPTTM 600V IXXH100N60C3IC110 = 100AGenX3TM VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VGVCGR TJ = 25C to 175C, RGE = 1M 600 VC TabEVGES Continuous 20 VVGEM Transient 3
ixxh150n60c3.pdf
Advance Technical InformationVCES = 600V600V XPTTM IGBT IXXH150N60C3IC110 = 150AGenX3TM VCE(sat) 2.5V tfi(typ) = 75nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Co
Otros transistores... IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , GT30F125 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2