All IGBT. IXXH110N65C4 Datasheet

 

IXXH110N65C4 IGBT. Datasheet pdf. Equivalent


   Type Designator: IXXH110N65C4
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 880 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 234 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.35 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 46 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Qgⓘ - Total Gate Charge, typ: 180 nC
   Package: TO247

 IXXH110N65C4 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IXXH110N65C4 Datasheet (PDF)

 ..1. Size:167K  ixys
ixxh110n65c4.pdf

IXXH110N65C4
IXXH110N65C4

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXXH110N65C4GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30nsIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VVGEM Transient 30 VGC

 9.1. Size:171K  ixys
ixxh100n60b3.pdf

IXXH110N65C4
IXXH110N65C4

Preliminary Technical InformationXPTTM 600V VCES = 600VIXXH100N60B3GenX3TM IC110 = 100A VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGC TabVGES Continuous 20 VEVGEM Transien

 9.2. Size:171K  ixys
ixxh100n60c3.pdf

IXXH110N65C4
IXXH110N65C4

Advance Technical InformationVCES = 600VXPTTM 600V IXXH100N60C3IC110 = 100AGenX3TM VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VGVCGR TJ = 25C to 175C, RGE = 1M 600 VC TabEVGES Continuous 20 VVGEM Transient 3

 9.3. Size:231K  ixys
ixxh150n60c3.pdf

IXXH110N65C4
IXXH110N65C4

Advance Technical InformationVCES = 600V600V XPTTM IGBT IXXH150N60C3IC110 = 150AGenX3TM VCE(sat) 2.5V tfi(typ) = 75nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Co

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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