IXXH110N65C4 PDF and Equivalents Search

 

IXXH110N65C4 Specs and Replacement

Type Designator: IXXH110N65C4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 880 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 234 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.35 V @25℃

tr ⓘ - Rise Time, typ: 46 nS

Coesⓘ - Output Capacitance, typ: 240 pF

Package: TO247

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IXXH110N65C4 datasheet

 ..1. Size:167K  ixys
 ixxh110n65c4.pdf pdf_icon

IXXH110N65C4

Advance Technical Information XPTTM 650V IGBT VCES = 650V IXXH110N65C4 GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30ns IGBT for 20-60 kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V VGES Continuous 20 V VGEM Transient 30 V G C ... See More ⇒

 9.1. Size:171K  ixys
 ixxh100n60b3.pdf pdf_icon

IXXH110N65C4

Preliminary Technical Information XPTTM 600V VCES = 600V IXXH100N60B3 GenX3TM IC110 = 100A VCE(sat) 1.80V tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G C Tab VGES Continuous 20 V E VGEM Transien... See More ⇒

 9.2. Size:171K  ixys
 ixxh100n60c3.pdf pdf_icon

IXXH110N65C4

Advance Technical Information VCES = 600V XPTTM 600V IXXH100N60C3 IC110 = 100A GenX3TM VCE(sat) 2.20V tfi(typ) = 75ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V G VCGR TJ = 25 C to 175 C, RGE = 1M 600 V C Tab E VGES Continuous 20 V VGEM Transient 3... See More ⇒

 9.3. Size:231K  ixys
 ixxh150n60c3.pdf pdf_icon

IXXH110N65C4

Advance Technical Information VCES = 600V 600V XPTTM IGBT IXXH150N60C3 IC110 = 150A GenX3TM VCE(sat) 2.5V tfi(typ) = 75ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V VGES Co... See More ⇒

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Specs: IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IHW40T60 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 .

Keywords - IXXH110N65C4 transistor spec

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