All IGBT. IXXH110N65C4 Datasheet

 

IXXH110N65C4 Datasheet and Replacement


   Type Designator: IXXH110N65C4
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 880 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 234 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.35 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 46 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Package: TO247
      - IGBT Cross-Reference

 

IXXH110N65C4 Datasheet (PDF)

 ..1. Size:167K  ixys
ixxh110n65c4.pdf pdf_icon

IXXH110N65C4

Advance Technical InformationXPTTM 650V IGBT VCES = 650VIXXH110N65C4GenX4TM IC110 = 110A VCE(sat) 2.35V Extreme Light Punch Through tfi(typ) = 30nsIGBT for 20-60 kHz SwitchingSymbol Test Conditions Maximum RatingsTO-247 ADVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VVGES Continuous 20 VVGEM Transient 30 VGC

 9.1. Size:171K  ixys
ixxh100n60b3.pdf pdf_icon

IXXH110N65C4

Preliminary Technical InformationXPTTM 600V VCES = 600VIXXH100N60B3GenX3TM IC110 = 100A VCE(sat) 1.80V tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGC TabVGES Continuous 20 VEVGEM Transien

 9.2. Size:171K  ixys
ixxh100n60c3.pdf pdf_icon

IXXH110N65C4

Advance Technical InformationVCES = 600VXPTTM 600V IXXH100N60C3IC110 = 100AGenX3TM VCE(sat) 2.20V tfi(typ) = 75nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VGVCGR TJ = 25C to 175C, RGE = 1M 600 VC TabEVGES Continuous 20 VVGEM Transient 3

 9.3. Size:231K  ixys
ixxh150n60c3.pdf pdf_icon

IXXH110N65C4

Advance Technical InformationVCES = 600V600V XPTTM IGBT IXXH150N60C3IC110 = 150AGenX3TM VCE(sat) 2.5V tfi(typ) = 75nsExtreme Light Punch throughIGBT for 20-60kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VVGES Co

Datasheet: IXGQ85N33PCD1 , IXGQ90N27PB , IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , GT30G122 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 .

History: IXXH100N60B3

Keywords - IXXH110N65C4 transistor datasheet

 IXXH110N65C4 cross reference
 IXXH110N65C4 equivalent finder
 IXXH110N65C4 lookup
 IXXH110N65C4 substitution
 IXXH110N65C4 replacement

 

 
Back to Top

 


 
.