IXXH30N60B3 Todos los transistores

 

IXXH30N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXXH30N60B3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 270 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 36 nS
   Coesⓘ - Capacitancia de salida, typ: 137 pF
   Qgⓘ - Carga total de la puerta, typ: 39 nC
   Paquete / Cubierta: TO247
 

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IXXH30N60B3 Datasheet (PDF)

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 ixxh30n60b3.pdf pdf_icon

IXXH30N60B3

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3GenX3TM IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient

 0.1. Size:189K  ixys
 ixxh30n60b3d1.pdf pdf_icon

IXXH30N60B3

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

 5.1. Size:190K  ixys
 ixxh30n60c3d1.pdf pdf_icon

IXXH30N60B3

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

 5.2. Size:214K  ixys
 ixxh30n60c3.pdf pdf_icon

IXXH30N60B3

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3GenX3TM IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Cont

MOSTRAR MÁS

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: NGTB25N120S | AOK30B60D | TA49021 | IGW60N60H3 | 2MBI50F-120 | FGH75T65SHDTLN4 | CM200E3U-24F

 

 
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