All IGBT. IXXH30N60B3 Datasheet

 

IXXH30N60B3 Datasheet and Replacement


   Type Designator: IXXH30N60B3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 270 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 36 nS
   Coesⓘ - Output Capacitance, typ: 137 pF
   Qgⓘ - Total Gate Charge, typ: 39 nC
   Package: TO247
      - IGBT Cross-Reference

 

IXXH30N60B3 Datasheet (PDF)

 ..1. Size:170K  ixys
 ixxh30n60b3.pdf pdf_icon

IXXH30N60B3

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3GenX3TM IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient

 0.1. Size:189K  ixys
 ixxh30n60b3d1.pdf pdf_icon

IXXH30N60B3

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

 5.1. Size:190K  ixys
 ixxh30n60c3d1.pdf pdf_icon

IXXH30N60B3

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

 5.2. Size:214K  ixys
 ixxh30n60c3.pdf pdf_icon

IXXH30N60B3

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3GenX3TM IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Cont

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Datasheet: IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IRG4PC50UD , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , IXGH10N60 .

History: STGB19NC60KD | CM200E3U-24F | SIGC03T60E | CRG05T60A44S-G | APT30GP60BDF1 | NGTB25N120S | 7MBR25SA120-01

Keywords - IXXH30N60B3 transistor datasheet

 IXXH30N60B3 cross reference
 IXXH30N60B3 equivalent finder
 IXXH30N60B3 lookup
 IXXH30N60B3 substitution
 IXXH30N60B3 replacement

 

 
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