IXXH30N60B3 Datasheet and Replacement, IGBT Equivalent Finder, Cross Reference. AllTransistors.com

IXXH30N60B3 Datasheet (PDF)

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Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3GenX3TM IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient

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Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

5.1. Size:190K ixys
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Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

5.2. Size:214K ixys
ixxh30n60c3.pdf pdf_icon

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3GenX3TM IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Cont

Datasheet: IXXN100N60B3H1 , IXXN110N65B4H1 , IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , STGW60V60DF , IXXH30N60C3 , IXXH30N65B4 , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , IXGH10N60 .