IXXH30N65B4 Todos los transistores

 

IXXH30N65B4 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXXH30N65B4
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 230 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 65 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 62 nS
   Coesⓘ - Capacitancia de salida, typ: 70 pF
   Qgⓘ - Carga total de la puerta, typ: 52 nC
   Paquete / Cubierta: TO247
 

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IXXH30N65B4 Datasheet (PDF)

 ..1. Size:169K  ixys
 ixxh30n65b4.pdf pdf_icon

IXXH30N65B4

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXXH30N65B4GenX4TM IC110 = 30AC VCE(sat) 2.0V Gtfi(typ) = 57nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingETO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20 VC TabEVGEM

 6.1. Size:190K  ixys
 ixxh30n60c3d1.pdf pdf_icon

IXXH30N65B4

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

 6.2. Size:170K  ixys
 ixxh30n60b3.pdf pdf_icon

IXXH30N65B4

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3GenX3TM IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient

 6.3. Size:189K  ixys
 ixxh30n60b3d1.pdf pdf_icon

IXXH30N65B4

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

MOSTRAR MÁS

Otros transistores... IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , IRG4PC50UD , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , IXGH10N60 , IXGH10N60A , IXGH40N60 .

History: IXGP4N100 | IXXK200N60B3 | STGWA30H60DFB | SKM150GB173D | APT150GN120J | AIKW75N60CT | 2MBI225U4N-170-50

 

 
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