Справочник IGBT. IXXH30N65B4

 

IXXH30N65B4 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IXXH30N65B4
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 230 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 65 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 62 nS
   Coesⓘ - Выходная емкость, типовая: 70 pF
   Тип корпуса: TO247

 Аналог (замена) для IXXH30N65B4

 

 

IXXH30N65B4 Datasheet (PDF)

 ..1. Size:169K  ixys
 ixxh30n65b4.pdf

IXXH30N65B4 IXXH30N65B4

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXXH30N65B4GenX4TM IC110 = 30AC VCE(sat) 2.0V Gtfi(typ) = 57nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingETO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGVGES Continuous 20 VC TabEVGEM

 6.1. Size:190K  ixys
 ixxh30n60c3d1.pdf

IXXH30N65B4 IXXH30N65B4

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

 6.2. Size:170K  ixys
 ixxh30n60b3.pdf

IXXH30N65B4 IXXH30N65B4

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3GenX3TM IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM Transient

 6.3. Size:189K  ixys
 ixxh30n60b3d1.pdf

IXXH30N65B4 IXXH30N65B4

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60B3D1GenX3TM w/ Diode IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Continuous 20 VC TabEVGEM

 6.4. Size:214K  ixys
 ixxh30n60c3.pdf

IXXH30N65B4 IXXH30N65B4

Advance Technical InformationXPTTM 600V IGBT VCES = 600VIXXH30N60C3GenX3TM IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32nsExtreme Light Punch ThroughIGBT for 20-60 kHz SwitchingTO-247Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 600 VVCGR TJ = 25C to 175C, RGE = 1M 600 VGVGES Cont

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