IXXH30N65B4 PDF and Equivalents Search

 

IXXH30N65B4 Specs and Replacement

Type Designator: IXXH30N65B4

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 230 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 65 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 62 nS

Coesⓘ - Output Capacitance, typ: 70 pF

Package: TO247

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IXXH30N65B4 datasheet

 ..1. Size:169K  ixys
 ixxh30n65b4.pdf pdf_icon

IXXH30N65B4

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXXH30N65B4 GenX4TM IC110 = 30A C VCE(sat) 2.0V G tfi(typ) = 57ns Extreme Light Punch Through IGBT for 5-30kHz Switching E TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G VGES Continuous 20 V C Tab E VGEM ... See More ⇒

 6.1. Size:190K  ixys
 ixxh30n60c3d1.pdf pdf_icon

IXXH30N65B4

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60C3D1 GenX3TM w/ Diode IC110 = 30A VCE(sat) 2.2V tfi(typ) = 32ns Extreme Light Punch Through IGBT for 20-60 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM ... See More ⇒

 6.2. Size:170K  ixys
 ixxh30n60b3.pdf pdf_icon

IXXH30N65B4

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60B3 GenX3TM IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM Transient ... See More ⇒

 6.3. Size:189K  ixys
 ixxh30n60b3d1.pdf pdf_icon

IXXH30N65B4

Advance Technical Information XPTTM 600V IGBT VCES = 600V IXXH30N60B3D1 GenX3TM w/ Diode IC110 = 30A VCE(sat) 1.85V tfi(typ) = 125ns Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 600 V VCGR TJ = 25 C to 175 C, RGE = 1M 600 V G VGES Continuous 20 V C Tab E VGEM... See More ⇒

SHOW MORE

Specs: IXXN110N65C4H1 , IXXN200N60B3 , IXXN200N60B3H1 , IXXN200N60C3H1 , IXXH110N65C4 , IXXH150N60C3 , IXXH30N60B3 , IXXH30N60C3 , AOK40B65H2AL , IXXH40N65B4 , IXXH40N65B4H1 , IXXH60N65B4 , IXXH60N65B4H1 , IXXH60N65C4 , IXGH10N60 , IXGH10N60A , IXGH40N60 .

Keywords - IXXH30N65B4 transistor spec

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