TGHP75N120FDR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGHP75N120FDR
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 883 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.7 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 19 nS
Coesⓘ - Capacitancia de salida, typ: 249 pF
Qgⓘ - Carga total de la puerta, typ: 325 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de TGHP75N120FDR IGBT
TGHP75N120FDR Datasheet (PDF)
tghp75n120fdr.pdf
TGHP75N120FDRField Stop Trench IGBTFeaturesTO-247 PLUS 1200V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationApplicationsInverter, Solar, UPS, WelderDevice Package Marking RemarkTGHP75N120FDR TO-247 PLUS TGHP75N120
tghp75n120f2d.pdf
TGHP75N120F2DField Stop Trench IGBTFeaturesTO-247 PLUS 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationApplications Solar Inverter, UPSDevice Package Marking RemarkTGHP75N120F2D TO-247 PL
Otros transistores... TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , RJP30H2A , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .
History: VS-40MT120UHAPBF
History: VS-40MT120UHAPBF
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