10N50C1D Todos los transistores

Introduzca al menos 3 números o letras

10N50C1D - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 10N50C1D

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75W

Tensión colector-emisor (Vce): 500V

Voltaje de saturación colector-emisor (Vce sat): 2.5V

Tensión emisor-compuerta (Veg): 20V

Corriente del colector DC máxima (Ic): 10A

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 50

Capacitancia de salida (Cc), pF:

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de 10N50C1D - IGBT

 

10N50C1D Datasheet (PDF)

1.1. hgtp10n40c1d hgtp10n40e1d hgtp10n50c1d hgtp10n50e1d.pdf Size:47K _harris_semi

10N50C1D
10N50C1D

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB 10A, 400V and 500V VCE(ON): 2.5V Max. EMITTER COLLECTOR TFALL: 1s, 0.5s GATE Low On-State Voltage COLLECTOR Fast Switching Speeds (FLANGE) High Input Impedance Anti-Paral

4.1. fqb10n50cftm.pdf Size:594K _fairchild_semi

10N50C1D
10N50C1D

October 2013 FQB10N50CF N-Channel QFET® FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS(on) = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is pro- duced using Fairchild Semiconductor’s proprietary planar stripe • Low gate charge ( Typ. 45 nC) and DMOS technology. This advanced MOSFET technology has been esp

4.2. fqp10n50cf fqpf10n50cf.pdf Size:987K _fairchild_semi

10N50C1D
10N50C1D

December 2006 TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 43 nC) DMOS technology. • Low Crss (typical 16pF) This advanced technology has been espe

Otros transistores... 10N40C1D , 10N40E1D , 10N40F1D , 10N50C1D , 10N50E1D , 10N50F1D , 12N60C3D , 14N36GVL , IKW50N60H3 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

 


10N50C1D
  10N50C1D
  10N50C1D
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |


Introduzca al menos 1 números o letras