TGHP75N120FDR PDF and Equivalents Search

 

TGHP75N120FDR Specs and Replacement


   Type Designator: TGHP75N120FDR
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 883 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   tr ⓘ - Rise Time, typ: 19 nS
   Coesⓘ - Output Capacitance, typ: 249 pF
   Package: TO247
 

 TGHP75N120FDR Substitution

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TGHP75N120FDR datasheet

 ..1. Size:970K  trinnotech
tghp75n120fdr.pdf pdf_icon

TGHP75N120FDR

TGHP75N120FDR Field Stop Trench IGBT Features TO-247 PLUS 1200V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification Applications Inverter, Solar, UPS, Welder Device Package Marking Remark TGHP75N120FDR TO-247 PLUS TGHP75N120... See More ⇒

 3.1. Size:1018K  trinnotech
tghp75n120f2d.pdf pdf_icon

TGHP75N120FDR

TGHP75N120F2D Field Stop Trench IGBT Features TO-247 PLUS 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications Solar Inverter, UPS Device Package Marking Remark TGHP75N120F2D TO-247 PL... See More ⇒

Specs: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , FGPF4536 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .

Keywords - TGHP75N120FDR transistor spec

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