TGHP75N120FDR Datasheet and Replacement
Type Designator: TGHP75N120FDR
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 883 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 19 nS
Coesⓘ - Output Capacitance, typ: 249 pF
Package: TO247
TGHP75N120FDR substitution
TGHP75N120FDR Datasheet (PDF)
tghp75n120fdr.pdf
TGHP75N120FDRField Stop Trench IGBTFeaturesTO-247 PLUS 1200V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationApplicationsInverter, Solar, UPS, WelderDevice Package Marking RemarkTGHP75N120FDR TO-247 PLUS TGHP75N120
tghp75n120f2d.pdf
TGHP75N120F2DField Stop Trench IGBTFeaturesTO-247 PLUS 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationApplications Solar Inverter, UPSDevice Package Marking RemarkTGHP75N120F2D TO-247 PL
Datasheet: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , FGD4536 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .
History: MBQ60T65PES
Keywords - TGHP75N120FDR transistor datasheet
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History: MBQ60T65PES
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