TGHP75N120FDR Specs and Replacement
Type Designator: TGHP75N120FDR
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 883 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 150 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 19 nS
Coesⓘ - Output Capacitance, typ: 249 pF
Package: TO247
TGHP75N120FDR Substitution - IGBT ⓘ Cross-Reference Search
TGHP75N120FDR datasheet
tghp75n120fdr.pdf
TGHP75N120FDR Field Stop Trench IGBT Features TO-247 PLUS 1200V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification Applications Inverter, Solar, UPS, Welder Device Package Marking Remark TGHP75N120FDR TO-247 PLUS TGHP75N120... See More ⇒
tghp75n120f2d.pdf
TGHP75N120F2D Field Stop Trench IGBT Features TO-247 PLUS 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification Applications Solar Inverter, UPS Device Package Marking Remark TGHP75N120F2D TO-247 PL... See More ⇒
Specs: TGH80N65F2DR , TGH80N65F2DS , TGHP75N120F2D , TGHP75N120FDR , TGL75N120FDR , TGPF15N60FDR , TGPF20N60FDR , TGH80N65F2D2 , FGPF4536 , 1MB05-120 , 1MB05D-120 , 1MB08-120 , 1MB08D-120 , 1MB10-120 , 1MB10D-120 , 1MB15D-060 , 1MB20-060 .
Keywords - TGHP75N120FDR transistor spec
TGHP75N120FDR cross reference
TGHP75N120FDR equivalent finder
TGHP75N120FDR lookup
TGHP75N120FDR substitution
TGHP75N120FDR replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
2n4401 | bc547 transistor | bd139 | 2n4401 datasheet | irf640 | irf840 | irf740 | c945 transistor