HGTH12N50E1 Todos los transistores

 

HGTH12N50E1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGTH12N50E1

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 75

Tensión colector-emisor (Vce): 500

Voltaje de saturación colector-emisor (Vce sat): 4.5

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 12

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 50

Empaquetado / Estuche: TO218

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HGTH12N50E1 Datasheet (PDF)

7.1. hgth12n4.pdf Size:45K _harris_semi

HGTH12N50E1
HGTH12N50E1

HGTH12N40C1D, HGTH12N40E1D,S E M I C O N D U C T O RHGTH12N50C1D, HGTH12N50E1D12A, 400V and 500V N-Channel IGBTswith Anti-Parallel Ultrafast DiodesApril 1995Features PackageJEDEC TO-218AC 12A, 400V and 500V VCE(ON): 2.5V Max.EMITTER TFALL: 1s, 0.5s COLLECTORGATE Low On-State Voltage Fast Switching SpeedsCOLLECTOR High Input Impedance(FLANG

9.1. hgt1s10n120bn hgth10n120bn hgtp10n120bn.pdf Size:196K _fairchild_semi

HGTH12N50E1
HGTH12N50E1

HGTG10N120BN, HGTP10N120BN,HGT1S10N120BNSData Sheet August 200235A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oCHGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvo

Otros transistores... HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , IRGP4086 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D .

 

 
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