HGTH12N50E1 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGTH12N50E1
Tipo de transistor: IGBT
Código de marcado: G12N50E1
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 75
Tensión máxima colector-emisor |Vce|, V: 500
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 12
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.5
Tensión máxima de puerta-umbral |VGE(th)|, V: 4.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 50
Carga total de la puerta (Qg), typ, nC: 19
Paquete / Cubierta: TO218
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HGTH12N50E1 Datasheet (PDF)
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Otros transistores... HGTG7N60A4 , HGTG7N60A4D , HGTH12N40C1 , HGTH12N40C1D , HGTH12N40E1 , HGTH12N40E1D , HGTH12N50C1 , HGTH12N50C1D , GT30F124 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , HGTP10N40E1 , HGTP10N40E1D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ