HGTH12N50E1
IGBT. Datasheet pdf. Equivalent
Type Designator: HGTH12N50E1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ -
Maximum Power Dissipation: 75
W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500
V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20
V
|Ic|ⓘ - Maximum Collector Current: 12
A @25℃
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.5
V @25℃
Tjⓘ -
Maximum Junction Temperature: 150
℃
trⓘ - Rise Time, typ: 50
nS
Package:
TO218
HGTH12N50E1
Datasheet (PDF)
..2. Size:49K 1
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HGTG10N120BN, HGTP10N120BN,HGT1S10N120BNSData Sheet August 200235A, 1200V, NPT Series N-Channel IGBT FeaturesThe HGTG10N120BN, HGTP10N120BN and 35A, 1200V, TC = 25oCHGT1S10N120BNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capabilitydesigns. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oCvo
Datasheet: HGTG7N60A4
, HGTG7N60A4D
, HGTH12N40C1
, HGTH12N40C1D
, HGTH12N40E1
, HGTH12N40E1D
, HGTH12N50C1
, HGTH12N50C1D
, GT30F124
, HGTH12N50E1D
, HGTM12N40C1
, HGTM12N40E1
, HGTP10N120BN
, HGTP10N40C1
, HGTP10N40C1D
, HGTP10N40E1
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.
