IXYK100N65C3D1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXYK100N65C3D1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 830 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.3 V @25℃

trⓘ - Tiempo de subida, typ: 42 nS

Coesⓘ - Capacitancia de salida, typ: 475 pF

Encapsulados: TO264

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IXYK100N65C3D1 datasheet

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IXYK100N65C3D1

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYK100N65C3D1 IC110 = 100A GenX3TM w/ Diode IXYX100N65C3D1 VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G C VCGR TJ = 25 C to

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IXYK100N65C3D1

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IXYK100N65C3D1

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion

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IXYK100N65C3D1

1200V XPTTM IGBT VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous

MOSTRAR MÁS

Otros transistores... IXYH60N90C3, IXYH75N65C3, IXYH75N65C3D1, IXYH75N65C3H1, IXYH80N90C3, IXYJ30N120C3D1, IXYK100N120B3, IXYK100N65B3D1, CRG40T60AK3HD, IXYK120N120B3, IXYK140N90C3, IXYL60N450, IXYP10N65C3, IXYP10N65C3D1, IXYP10N65C3D1M, IXYP15N65C3, IXYP15N65C3D1