IXYK100N65C3D1 Datasheet. Specs and Replacement

Type Designator: IXYK100N65C3D1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 830 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃

tr ⓘ - Rise Time, typ: 42 nS

Coesⓘ - Output Capacitance, typ: 475 pF

Package: TO264

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IXYK100N65C3D1 datasheet

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IXYK100N65C3D1

Advance Technical Information VCES = 650V XPTTM 650V IGBT IXYK100N65C3D1 IC110 = 100A GenX3TM w/ Diode IXYX100N65C3D1 VCE(sat) 2.3V tfi(typ) = 60ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V G C VCGR TJ = 25 C to... See More ⇒

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IXYK100N65C3D1

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IXYK100N65C3D1

N E W P R O D U C T B R I E F Efficiency Through Technology 1200V XPT IGBTs Extreme-Light Punch-Through IGBTs for High-Speed Hard-Switching Applications October 2012 OVERVIEW TO-247 IXYS Corporation expands its 1200V XPT IGBT product line. With current ratings of up to 220A, these new devices are designed to minimize switching losses in high-voltage, hard-switching applica- tion... See More ⇒

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IXYK100N65C3D1

1200V XPTTM IGBT VCES = 1200V IXYK100N120C3 GenX3TM IC110 = 100A IXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110ns High-Speed IGBT for 20-50 kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings G C VCES TJ = 25 C to 175 C 1200 V E Tab VCGR TJ = 25 C to 175 C, RGE = 1M 1200 V VGES Continuous ... See More ⇒

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Specs: IXYH60N90C3, IXYH75N65C3, IXYH75N65C3D1, IXYH75N65C3H1, IXYH80N90C3, IXYJ30N120C3D1, IXYK100N120B3, IXYK100N65B3D1, CRG40T60AK3HD, IXYK120N120B3, IXYK140N90C3, IXYL60N450, IXYP10N65C3, IXYP10N65C3D1, IXYP10N65C3D1M, IXYP15N65C3, IXYP15N65C3D1

Keywords - IXYK100N65C3D1 transistor spec

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