IXXR110N60B4H1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXXR110N60B4H1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 400 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 48 nS

Coesⓘ - Capacitancia de salida, typ: 440 pF

Encapsulados: ISOPLUS247

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IXXR110N60B4H1 datasheet

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IXXR110N60B4H1

Advance Technical Information XPTTM 600V VCES = 600V IXXR110N60B4H1 GenX4TM w/ Diode IC110 = 75A VCE(sat) 2.0V (Electrically Isolated Tab) tfi(typ) = 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous

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IXXR110N60B4H1

VCES = 650V XPTTM 650V GenX4TM IXXR110N65B4H1 IC110 = 70A w/ Sonic Diode VCE(sat) 2.20V (Electrically Isolated Tab) tfi(typ) = 85ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G C VGES Continuous 20 V Isolated Ta

 9.1. Size:227K  ixys
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IXXR110N60B4H1

Advance Technical Information XPTTM 600V VCES = 600V IXXR100N60B3H1 GenX3TM w/ Diode IC110 = 68A VCE(sat) 1.80V (Electrically Isolated Tab) tfi(typ) = 150ns Extreme Light Punch Through IGBT for 10-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous

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