IXXR110N60B4H1 Datasheet and Replacement
Type Designator: IXXR110N60B4H1
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 400 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 48 nS
Coesⓘ - Output Capacitance, typ: 440 pF
Package: ISOPLUS247
- IGBT Cross-Reference
IXXR110N60B4H1 Datasheet (PDF)
ixxr110n60b4h1.pdf

Advance Technical InformationXPTTM 600V VCES = 600VIXXR110N60B4H1GenX4TM w/ Diode IC110 = 75A VCE(sat) 2.0V (Electrically Isolated Tab)tfi(typ) = 27nsExtreme Light Punch ThroughIGBT for 5-30kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous
ixxr110n65b4h1.pdf

VCES = 650VXPTTM 650V GenX4TM IXXR110N65B4H1IC110 = 70Aw/ Sonic Diode VCE(sat) 2.20V (Electrically Isolated Tab)tfi(typ) = 85nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCVGES Continuous 20 V Isolated Ta
ixxr100n60b3h1.pdf

Advance Technical InformationXPTTM 600V VCES = 600VIXXR100N60B3H1GenX3TM w/ Diode IC110 = 68A VCE(sat) 1.80V (Electrically Isolated Tab)tfi(typ) = 150nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingISOPLUS247TMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C, RGE = 1M 600 VVGES Continuous
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: NCE30TD60BP | FD200R12PT4_B6
Keywords - IXXR110N60B4H1 transistor datasheet
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IXXR110N60B4H1 equivalent finder
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IXXR110N60B4H1 replacement
History: NCE30TD60BP | FD200R12PT4_B6



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