1MBH50-060 Todos los transistores

 

1MBH50-060 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 1MBH50-060
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 310 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 82 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 600 nS
   Coesⓘ - Capacitancia de salida, typ: 650 pF
   Paquete / Cubierta: TO3PL
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1MBH50-060 Datasheet (PDF)

 ..1. Size:225K  fuji
 1mbh50-060.pdf pdf_icon

1MBH50-060

1MBH50-060,1MBH50D-060,Molded IGBT600V / 50AMolded PackageFeatures Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-upApplications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supplyEquivalent Circuit Schemati

 8.1. Size:225K  fuji
 1mbh50d-060.pdf pdf_icon

1MBH50-060

1MBH50-060,1MBH50D-060,Molded IGBT600V / 50AMolded PackageFeatures Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-upApplications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supplyEquivalent Circuit Schemati

Otros transistores... 1MBH10D-120 , 1MBH15-120 , 1MBH15D-060 , 1MBH15D-120 , 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , SGT60N60FD1P7 , 1MBH50D-060 , HCKW40N65H2 , HCKW60N65BH2A , HCKW60N65CH2A , HCKW75N65BH2 , HCKW75N65FH2 , 2N6975 , 2N6976 .

History: DM2G75SH6N | NGD15N41A | DM1GL75SH12A | NCE40ED75VT | CM150DU-12F | JNG20T60PS | IXYN100N65B3D1

 

 
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