1MBH50-060 Datasheet. Specs and Replacement
Type Designator: 1MBH50-060 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 310 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 82 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3 V @25℃
tr ⓘ - Rise Time, typ: 600 nS
Coesⓘ - Output Capacitance, typ: 650 pF
Package: TO3PL
1MBH50-060 Substitution - IGBTⓘ Cross-Reference Search
1MBH50-060 datasheet
1mbh50-060.pdf
1MBH50-060,1MBH50D-060, Molded IGBT 600V / 50A Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-up Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Equivalent Circuit Schemati... See More ⇒
1mbh50d-060.pdf
1MBH50-060,1MBH50D-060, Molded IGBT 600V / 50A Molded Package Features Small molded package Low power loss Soft switching with low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Comprehensive line-up Applications Inverter for Motor drive AC and DC Servo drive amplifier Uninterruptible power supply Equivalent Circuit Schemati... See More ⇒
Specs: 1MBH10D-120, 1MBH15-120, 1MBH15D-060, 1MBH15D-120, 1MBH20D-060, 1MBH25-120, 1MBH25D-120, 1MBH30D-060, CRG60T60AK3HD, 1MBH50D-060, HCKW40N65H2, HCKW60N65BH2A, HCKW60N65CH2A, HCKW75N65BH2, HCKW75N65FH2, 2N6975, 2N6976
Keywords - 1MBH50-060 transistor spec
1MBH50-060 cross reference
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History: HCKW75N65BH2 | HGT1S12N60C3S | HCKW75N65FH2 | 2N6976 | HGT1S1N120BNDS9A | HGT1S14N36G3VLS9A | 2N6975
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