HIH30N60BP Todos los transistores

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 hih30n60bp.pdf

Dec 2013 VCES = 600 V IC = 30 A HIH30N60BP VCE(sat) typ = 2.2 V 600V PT IGBT TO-3P FEATURES Low VCE(sat) G Maximum Junction Temperature 150 C E Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behavior Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-

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 hih30n140ih-db.pdf

Feb 2023 HIH30N140IH-DB 1400V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 1400 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.50 V 1400V Breakdown voltage Eoff 1.41 mJ Maximum Junction temperature, TJ(max)=175 Package & Internal Circuit Application TO-3PN SYMBOL

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 hih30n120tf.pdf

Dec 2013 VCES = 1200 V IC = 30 A HIH30N120TF VCE(sat) typ = 2.0 V 1200V Field Stop Trench IGBT TO-3P FEATURES 1200V Field Stop Trench Technology G High Speed Switching C E Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V Collector Current Cont