HIH30N60BP Datasheet and Replacement, IGBT Equivalent Finder, Cross Reference. AllTransistors.com

HIH30N60BP Datasheet (PDF)

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Dec 2013VCES = 600 VIC = 30 AHIH30N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-3PFEATURES Low VCE(sat)G Maximum Junction Temperature 150 CE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum Ratings Symbol Parameter Value UnitsVCES Collector-

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hih30n140ih-db.pdf pdf_icon

Feb 2023HIH30N140IH-DB1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 1.41 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-3PN SYMBOL

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hih30n120tf.pdf pdf_icon

Dec 2013VCES = 1200 VIC = 30 AHIH30N120TF VCE(sat) typ = 2.0 V1200V Field Stop Trench IGBTTO-3PFEATURES 1200V Field Stop Trench TechnologyG High Speed SwitchingCE Low Conduction Loss Positive Temperature Coefficient Easy Parallel OperationAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 1200 VCollector Current Cont

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .