HIH30N60BP IGBT. Datasheet pdf. Equivalent
Type Designator: HIH30N60BP
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 208 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 81 nS
Coesⓘ - Output Capacitance, typ: 143 pF
Qgⓘ - Total Gate Charge, typ: 104 nC
Package: TO3P
HIH30N60BP Transistor Equivalent Substitute - IGBT Cross-Reference Search
HIH30N60BP Datasheet (PDF)
hih30n60bp.pdf
Dec 2013VCES = 600 VIC = 30 AHIH30N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-3PFEATURES Low VCE(sat)G Maximum Junction Temperature 150 CE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum Ratings Symbol Parameter Value UnitsVCES Collector-
hih30n140ih-db.pdf
Feb 2023HIH30N140IH-DB1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 1.41 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-3PN SYMBOL
hih30n120tf.pdf
Dec 2013VCES = 1200 VIC = 30 AHIH30N120TF VCE(sat) typ = 2.0 V1200V Field Stop Trench IGBTTO-3PFEATURES 1200V Field Stop Trench TechnologyG High Speed SwitchingCE Low Conduction Loss Positive Temperature Coefficient Easy Parallel OperationAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-Emitter Voltage 1200 VCollector Current Cont
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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