All IGBT. HIH30N60BP Datasheet

 

HIH30N60BP IGBT. Datasheet pdf. Equivalent

Type Designator: HIH30N60BP

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 208

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 81

Maximum Collector Capacity (Cc), pF: 143

Package: TO3P

HIH30N60BP Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIH30N60BP Datasheet (PDF)

1.1. hih30n60bp.pdf Size:643K _igbt_a

HIH30N60BP
HIH30N60BP

Dec 2013 VCES = 600 V IC = 30 A HIH30N60BP VCE(sat) typ = 2.2 V 600V PT IGBT TO-3P FEATURES Low VCE(sat) G Maximum Junction Temperature 150 C E Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behavior Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-

4.1. hih30n120tf.pdf Size:892K _igbt_a

HIH30N60BP
HIH30N60BP

Dec 2013 VCES = 1200 V IC = 30 A HIH30N120TF VCE(sat) typ = 2.0 V 1200V Field Stop Trench IGBT TO-3P FEATURES 1200V Field Stop Trench Technology G High Speed Switching C E Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-Emitter Voltage 1200 V Collector Current – Cont

Datasheet: RGTH80TS65 , RGTH80TS65D , RJP4007ANS , HIA20N60BP , HIA30N60BP , HIH20N60BP , HIH25N120TN , HIH30N120TF , GT60M303 , HIL40N120TF , HIL40N120VF , APT100GN120JDQ4 , APT100GT60JR , APT12GT60KRG , APT13GP120BDQ1G , APT150GN120JDQ4 , APT150GT120JR .

 


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IGBT: IRGC16B60KB | IRGC16B120KB | IRGC15B120UB | IRGC15B120KB | IRGC100B60UB | IRGC100B60KB | IRGC100B120UB | IRGC100B120KB | IGC70T120T6RL | SIGC05T60SNC |