APT25GP90BDQ1G Todos los transistores

 

APT25GP90BDQ1G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT25GP90BDQ1G
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 417 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 900 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 72 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.9 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 16 nS
   Coesⓘ - Capacitancia de salida, typ: 220 pF
   Qgⓘ - Carga total de la puerta, typ: 110 nC
   Paquete / Cubierta: TO247
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APT25GP90BDQ1G Datasheet (PDF)

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 apt25gp90bdq1g.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 3.1. Size:205K  apt
 apt25gp90bdf1.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BDF1APT25GP90BDF1900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCEC Low Conduction Loss 100 kHz

 4.1. Size:188K  apt
 apt25gp90bg.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BAPT25GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCCE Low Conduction Loss 100 kHz operat

 4.2. Size:175K  apt
 apt25gp90b.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BAPT25GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCCE Low Conduction Loss 100 kHz operat

MOSTRAR MÁS

Otros transistores... APT13GP120BDQ1G , APT150GN120JDQ4 , APT150GT120JR , APT15GN120KG , APT15GP60BG , APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , FGPF4633 , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG , APT35GP120B2DQ2G , APT40GR120B , APT40GR120S , APT44GA60BD30C .

History: IRGS14B40L | RJH1DF7RDPQ-80 | APT40GR120S | MWI75-12T7T

 

 
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