APT25GP90BDQ1G Todos los transistores

 

APT25GP90BDQ1G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT25GP90BDQ1G

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 417 W

|Vce|ⓘ - Tensión máxima colector-emisor: 900 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 72 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.9 V @25℃

trⓘ - Tiempo de subida, typ: 16 nS

Coesⓘ - Capacitancia de salida, typ: 220 pF

Encapsulados: TO247

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APT25GP90BDQ1G datasheet

 ..1. Size:441K  apt
 apt25gp90bdq1g.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 3.1. Size:205K  apt
 apt25gp90bdf1.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BDF1 APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz

 4.1. Size:188K  apt
 apt25gp90bg.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss 100 kHz operat

 4.2. Size:175K  apt
 apt25gp90b.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss 100 kHz operat

MOSTRAR MÁS

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