APT25GP90BDQ1G - аналоги и описание IGBT

 

APT25GP90BDQ1G - аналоги, основные параметры, даташиты

Наименование: APT25GP90BDQ1G

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 417 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 900 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 72 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.9 V @25℃

tr ⓘ - Время нарастания типовое: 16 nS

Coesⓘ - Выходная емкость, типовая: 220 pF

Тип корпуса: TO247

 Аналог (замена) для APT25GP90BDQ1G

- подбор ⓘ IGBT транзистора по параметрам

 

APT25GP90BDQ1G даташит

 ..1. Size:441K  apt
 apt25gp90bdq1g.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 3.1. Size:205K  apt
 apt25gp90bdf1.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BDF1 APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz

 4.1. Size:188K  apt
 apt25gp90bg.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss 100 kHz operat

 4.2. Size:175K  apt
 apt25gp90b.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss 100 kHz operat

ПОКАЗАТЬ ЕЩЁ

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History: APT15GP90BDQ1G | APT15GN120KG

 

 

 


 
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