All IGBT. APT25GP90BDQ1G Datasheet

 

APT25GP90BDQ1G IGBT. Datasheet pdf. Equivalent


   Type Designator: APT25GP90BDQ1G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 417 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 72 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 16 nS
   Coesⓘ - Output Capacitance, typ: 220 pF
   Package: TO247

 APT25GP90BDQ1G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT25GP90BDQ1G Datasheet (PDF)

 ..1. Size:441K  apt
apt25gp90bdq1g.pdf

APT25GP90BDQ1G
APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

 3.1. Size:205K  apt
apt25gp90bdf1.pdf

APT25GP90BDQ1G
APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BDF1APT25GP90BDF1900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCEC Low Conduction Loss 100 kHz

 4.1. Size:188K  apt
apt25gp90bg.pdf

APT25GP90BDQ1G
APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BAPT25GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCCE Low Conduction Loss 100 kHz operat

 4.2. Size:175K  apt
apt25gp90b.pdf

APT25GP90BDQ1G
APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BAPT25GP90B900V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. GCCE Low Conduction Loss 100 kHz operat

Datasheet: APT13GP120BDQ1G , APT150GN120JDQ4 , APT150GT120JR , APT15GN120KG , APT15GP60BG , APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , CRG60T60AN3H , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG , APT35GP120B2DQ2G , APT40GR120B , APT40GR120S , APT44GA60BD30C .

 

 
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