APT25GP90BDQ1G PDF and Equivalents Search

 

APT25GP90BDQ1G Specs and Replacement

Type Designator: APT25GP90BDQ1G

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 417 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 72 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 3.9 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Coesⓘ - Output Capacitance, typ: 220 pF

Package: TO247

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APT25GP90BDQ1G datasheet

 ..1. Size:441K  apt
 apt25gp90bdq1g.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi... See More ⇒

 3.1. Size:205K  apt
 apt25gp90bdf1.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90BDF1 APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz ... See More ⇒

 4.1. Size:188K  apt
 apt25gp90bg.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss 100 kHz operat... See More ⇒

 4.2. Size:175K  apt
 apt25gp90b.pdf pdf_icon

APT25GP90BDQ1G

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss 100 kHz operat... See More ⇒

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Specs: APT13GP120BDQ1G , APT150GN120JDQ4 , APT150GT120JR , APT15GN120KG , APT15GP60BG , APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , RJP63F3DPP-M0 , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG , APT35GP120B2DQ2G , APT40GR120B , APT40GR120S , APT44GA60BD30C .

Keywords - APT25GP90BDQ1G transistor spec

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