APT30GN60BDQ2G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT30GN60BDQ2G  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 203 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 63 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 14 nS

Coesⓘ - Capacitancia de salida, typ: 70 pF

Encapsulados: TO247

  📄📄 Copiar 

 Búsqueda de reemplazo de APT30GN60BDQ2G IGBT

- Selecciónⓘ de transistores por parámetros

 

APT30GN60BDQ2G datasheet

 ..1. Size:429K  apt
 apt30gn60bdq2g.pdf pdf_icon

APT30GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60BDQ2(G) 600V APT30GN60BDQ2 APT30GN60BDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distrib

 4.1. Size:395K  apt
 apt30gn60bg.pdf pdf_icon

APT30GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60B(G) 600V APT30GN60B APT30GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

 5.1. Size:687K  apt
 apt30gn60sg apt30gp60bg.pdf pdf_icon

APT30GN60BDQ2G

APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT D3PAK A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for S C very fast switching, making it ideal for high frequency, high voltage switch- G E mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT pr

 5.2. Size:140K  microsemi
 apt30gn60kg.pdf pdf_icon

APT30GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60K(G) 600V APT30GN60K APT30GN60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a

MOSTRAR MÁS

Otros transistores... APT150GN120JDQ4, APT150GT120JR, APT15GN120KG, APT15GP60BG, APT15GP60S, APT15GP90BDQ1G, APT15GT60KRG, APT25GP90BDQ1G, JT075N065WED, APT30GP60BDQ1G, APT30GT60KRG, APT35GN120SG, APT35GP120B2DQ2G, APT40GR120B, APT40GR120S, APT44GA60BD30C, APT44GA60SD30C