APT30GN60BDQ2G - аналоги и описание IGBT

 

APT30GN60BDQ2G - аналоги, основные параметры, даташиты

Наименование: APT30GN60BDQ2G

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 203 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 63 A @25℃

Tj ⓘ - Максимальная температура перехода: 175 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃

tr ⓘ - Время нарастания типовое: 14 nS

Coesⓘ - Выходная емкость, типовая: 70 pF

Тип корпуса: TO247

 Аналог (замена) для APT30GN60BDQ2G

- подбор ⓘ IGBT транзистора по параметрам

 

APT30GN60BDQ2G даташит

 ..1. Size:429K  apt
apt30gn60bdq2g.pdfpdf_icon

APT30GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60BDQ2(G) 600V APT30GN60BDQ2 APT30GN60BDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distrib

 4.1. Size:395K  apt
apt30gn60bg.pdfpdf_icon

APT30GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60B(G) 600V APT30GN60B APT30GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

 5.1. Size:687K  apt
apt30gn60sg apt30gp60bg.pdfpdf_icon

APT30GN60BDQ2G

APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT D3PAK A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for S C very fast switching, making it ideal for high frequency, high voltage switch- G E mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT pr

 5.2. Size:140K  microsemi
apt30gn60kg.pdfpdf_icon

APT30GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60K(G) 600V APT30GN60K APT30GN60KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a

Другие IGBT... APT150GN120JDQ4 , APT150GT120JR , APT15GN120KG , APT15GP60BG , APT15GP60S , APT15GP90BDQ1G , APT15GT60KRG , APT25GP90BDQ1G , FGH60N60SFD , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG , APT35GP120B2DQ2G , APT40GR120B , APT40GR120S , APT44GA60BD30C , APT44GA60SD30C .

 

 

 


 
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