All IGBT. APT30GN60BDQ2G Datasheet

 

APT30GN60BDQ2G IGBT. Datasheet pdf. Equivalent


   Type Designator: APT30GN60BDQ2G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 203 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 63 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 14 nS
   Coesⓘ - Output Capacitance, typ: 70 pF
   Package: TO247

 APT30GN60BDQ2G Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

APT30GN60BDQ2G Datasheet (PDF)

 ..1. Size:429K  apt
apt30gn60bdq2g.pdf

APT30GN60BDQ2G
APT30GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60BDQ2(G) 600V APT30GN60BDQ2 APT30GN60BDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distrib

 4.1. Size:395K  apt
apt30gn60bg.pdf

APT30GN60BDQ2G
APT30GN60BDQ2G

TYPICAL PERFORMANCE CURVES APT30GN60B(G) 600V APT30GN60B APT30GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and

 5.1. Size:687K  apt
apt30gn60sg apt30gp60bg.pdf

APT30GN60BDQ2G
APT30GN60BDQ2G

APT30GP60BAPT30GP60S600VB POWER MOS 7 IGBTD3PAKA new generation of high voltage power IGBTs. Using punch-throughtechnology and a proprietary metal gate, this IGBT has been optimized forSCvery fast switching, making it ideal for high frequency, high voltage switch-G Emode power supplies and tail current sensitive applications. In many cases,the POWER MOS 7 IGBT pr

 5.2. Size:140K  microsemi
apt30gn60kg.pdf

APT30GN60BDQ2G
APT30GN60BDQ2G

TYPICAL PERFORMANCE CURVESAPT30GN60K(G) 600V APT30GN60KAPT30GN60KG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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