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APT40GR120S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT40GR120S
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 88 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 25 nS
   Coesⓘ - Capacitancia de salida, typ: 320 pF
   Qgⓘ - Carga total de la puerta, typ: 210 nC
   Paquete / Cubierta: TO268AB
     - Selección de transistores por parámetros

 

APT40GR120S Datasheet (PDF)

 ..1. Size:158K  microsemi
apt40gr120s.pdf pdf_icon

APT40GR120S

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical .Ultra Fast NPT - IGBT(B)The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA KUsing Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed.(S)CG EFeaturesGC Low Saturation Voltage Short Circuit

 4.1. Size:158K  microsemi
apt40gr120b.pdf pdf_icon

APT40GR120S

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical .Ultra Fast NPT - IGBT(B)The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA KUsing Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed.(S)CG EFeaturesGC Low Saturation Voltage Short Circuit

 8.1. Size:170K  apt
apt40gp90j.pdf pdf_icon

APT40GR120S

TYPICAL PERFORMANCE CURVES APT40GP90JAPT40GP90J900V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss SSOA Rat

 8.2. Size:197K  apt
apt40gp60b2df2.pdf pdf_icon

APT40GR120S

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

Otros transistores... APT15GT60KRG , APT25GP90BDQ1G , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG , APT35GP120B2DQ2G , APT40GR120B , GT45F122 , APT44GA60BD30C , APT44GA60SD30C , APT50GF120B2RG , APT50GF120JRDQ3 , APT50GF120LRG , APT50GP60B2DQ2G , APT50GP60LDLG , APT50GT120B2RDLG .

 

 
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