APT40GR120S - аналоги и описание IGBT

 

APT40GR120S - Аналоги. Основные параметры


   Наименование: APT40GR120S
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pc ⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic| ⓘ - Максимальный постоянный ток коллектора: 88 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.2 V @25℃
   Tj ⓘ - Максимальная температура перехода: 150 ℃
   tr ⓘ - Время нарастания типовое: 25 nS
   Coesⓘ - Выходная емкость, типовая: 320 pF
   Тип корпуса: TO268AB
 

 Аналог (замена) для APT40GR120S

   - подбор ⓘ IGBT транзистора по параметрам

 

Технические параметры APT40GR120S

 ..1. Size:158K  microsemi
apt40gr120s.pdfpdf_icon

APT40GR120S

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical . Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA K Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. (S) C G E Features G C Low Saturation Voltage Short Circuit

 4.1. Size:158K  microsemi
apt40gr120b.pdfpdf_icon

APT40GR120S

APT40GR120B_S APT40GR120B APT40GR120S 1200V, 40A, VCE(on)= 2.5V Typical . Ultra Fast NPT - IGBT (B) The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D3PA K Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. (S) C G E Features G C Low Saturation Voltage Short Circuit

 8.1. Size:170K  apt
apt40gp90j.pdfpdf_icon

APT40GR120S

TYPICAL PERFORMANCE CURVES APT40GP90J APT40GP90J 900V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss SSOA Rat

 8.2. Size:197K  apt
apt40gp60b2df2.pdfpdf_icon

APT40GR120S

TYPICAL PERFORMANCE CURVES APT40GP60B2DF2 APT40GP60B2DF2 600V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G switchmode power supplies. C E Low Conduction Loss 100 k

Другие IGBT... APT15GT60KRG , APT25GP90BDQ1G , APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG , APT35GP120B2DQ2G , APT40GR120B , MBQ50T65FDSC , APT44GA60BD30C , APT44GA60SD30C , APT50GF120B2RG , APT50GF120JRDQ3 , APT50GF120LRG , APT50GP60B2DQ2G , APT50GP60LDLG , APT50GT120B2RDLG .

 

 
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